Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite t...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Changyeop, Cho, Gyuseong, Unruh, Troy, Hur, Seop, Kwon, Inyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7294422/
https://www.ncbi.nlm.nih.gov/pubmed/32408675
http://dx.doi.org/10.3390/s20102765

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7294422/
https://www.ncbi.nlm.nih.gov/pubmed/32408675
http://dx.doi.org/10.3390/s20102765

Ejemplares similares