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Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad
According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite t...
Autores principales: | Lee, Changyeop, Cho, Gyuseong, Unruh, Troy, Hur, Seop, Kwon, Inyong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7294422/ https://www.ncbi.nlm.nih.gov/pubmed/32408675 http://dx.doi.org/10.3390/s20102765 |
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