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Enhancing Water-Splitting Efficiency Using a Zn/Sn-Doped PN Photoelectrode of Pseudocubic α-Fe(2)O(3) Nanoparticles

α-Phase hematite photoelectrodes can split water. This material is nontoxic, inexpensive, and chemically stable; its low energy gap of 2.3 eV absorbs light with wavelengths lower than 550 nm, accounting for approximately 30% of solar energy. Previously, we reported polyhedral pseudocubic α-Fe(2)O(3)...

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Detalles Bibliográficos
Autores principales: Yang, Jie-Xiang, Meng, Yongtao, Tseng, Chuan-Ming, Huang, Yan-Kai, Lin, Tung-Ming, Wang, Yang-Ming, Deng, Jin-Pei, Wu, Hsiang-Chiu, Hung, Wei-Hsuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7295917/
https://www.ncbi.nlm.nih.gov/pubmed/32542412
http://dx.doi.org/10.1186/s11671-020-03362-5
Descripción
Sumario:α-Phase hematite photoelectrodes can split water. This material is nontoxic, inexpensive, and chemically stable; its low energy gap of 2.3 eV absorbs light with wavelengths lower than 550 nm, accounting for approximately 30% of solar energy. Previously, we reported polyhedral pseudocubic α-Fe(2)O(3) nanocrystals using a facile hydrothermal route to increase spatial charge separation, enhancing the photocurrent of photocatalytic activity in the water-splitting process. Here, we propose a p-n junction structure in the photoanode of pseudocubic α-Fe(2)O(3) to improve short carrier diffusion length, which limits its photocatalytic efficiency. We dope Zn on top of an Fe(2)O(3) photoanode to form a layer of p-type semiconductor material; Sn is doped from the FTO substrate to form a layer of n-type semiconductor material. The p-n junction, n-type Fe(2)O(3):Sn and p-type Fe(2)O(3):Zn, increase light absorption and charge separation caused by the internal electric field in the p-n junction.