Cargando…
Coexistence of valley polarization and Chern insulating states in MoS(2) monolayers with n-p codoping
The electronic and topological properties of MoS(2) monolayers with n-p codoping effect are investigated by using first-principles calculations. Two types of the doped Nb atoms play the roles of the p-type and n-type dopants, respectively. The n-p codoping is found inducing a large valley polarizati...
Autores principales: | Wei, Xinyuan, Zhang, Jiayong, Zhao, Bao, Yang, Zhongqin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7300020/ https://www.ncbi.nlm.nih.gov/pubmed/32555304 http://dx.doi.org/10.1038/s41598-020-66912-y |
Ejemplares similares
-
Steering valley-polarized emission of monolayer MoS(2) sandwiched in plasmonic antennas
por: Wen, Te, et al.
Publicado: (2020) -
Ultrafast Multi-Level Logic Gates with Spin-Valley Coupled Polarization Anisotropy in Monolayer MoS(2)
por: Wang, Yu-Ting, et al.
Publicado: (2015) -
Magnetic Chern Insulators in a monolayer of Transition Metal Trichalcogenides
por: Mishra, Archana, et al.
Publicado: (2018) -
Structural and electronic properties of germanene/MoS(2) monolayer and silicene/MoS(2) monolayer superlattices
por: Li, Xiaodan, et al.
Publicado: (2014) -
Observation of ~100% valley-coherent excitons in monolayer MoS(2) through giant enhancement of valley coherence time
por: Gupta, Garima, et al.
Publicado: (2023)