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In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition

We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe(2) deposits. We use a controllable vapor phase synthesis method using MoSe(2) powder as the only precursor, to fabricate nano- to micro-size few layer thick MoSe(2) dep...

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Autores principales: Santiago, Peter Joseph, Ramirez, Francisco, Tavassol, Hadi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311385/
https://www.ncbi.nlm.nih.gov/pubmed/32576899
http://dx.doi.org/10.1038/s41598-020-67132-0
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author Santiago, Peter Joseph
Ramirez, Francisco
Tavassol, Hadi
author_facet Santiago, Peter Joseph
Ramirez, Francisco
Tavassol, Hadi
author_sort Santiago, Peter Joseph
collection PubMed
description We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe(2) deposits. We use a controllable vapor phase synthesis method using MoSe(2) powder as the only precursor, to fabricate nano- to micro-size few layer thick MoSe(2) deposits with tunable number densities on SiO(2)/Si substrates. We employ this controllable synthesis method to correlate characteristic Raman spectroscopy response of MoSe(2) at ca. 242 cm(−1) (A(1g)) and ca. 280 cm(−1) (E(2g)(1)) with the thickness of the deposits acquired from atomic force microscopy (AFM). We also use this array of well-defined atomically thin MoSe(2) deposits to study possible hydrogenation effects on select architectures using in-situ Raman spectroscopy. Interestingly, our analysis indicates that ultrathin MoSe(2) deposits with exposed edges show a blue shift of 1–2 cm(−1) when exposed to H(2) flow at 150–250 sccm for 2–4 hours in a sealed reaction cell. Exposure to Ar flow under same condition reverses the observed shift in the A(1g) mode of the select MoSe(2) deposits. Our measurements provide in-situ evidence for hydrogen adsorption on MoSe(2) deposits at room temperature and insight into the possible active sites for hydrogen reactions on layered dichalcogenides at lower dimensions.
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spelling pubmed-73113852020-06-25 In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition Santiago, Peter Joseph Ramirez, Francisco Tavassol, Hadi Sci Rep Article We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe(2) deposits. We use a controllable vapor phase synthesis method using MoSe(2) powder as the only precursor, to fabricate nano- to micro-size few layer thick MoSe(2) deposits with tunable number densities on SiO(2)/Si substrates. We employ this controllable synthesis method to correlate characteristic Raman spectroscopy response of MoSe(2) at ca. 242 cm(−1) (A(1g)) and ca. 280 cm(−1) (E(2g)(1)) with the thickness of the deposits acquired from atomic force microscopy (AFM). We also use this array of well-defined atomically thin MoSe(2) deposits to study possible hydrogenation effects on select architectures using in-situ Raman spectroscopy. Interestingly, our analysis indicates that ultrathin MoSe(2) deposits with exposed edges show a blue shift of 1–2 cm(−1) when exposed to H(2) flow at 150–250 sccm for 2–4 hours in a sealed reaction cell. Exposure to Ar flow under same condition reverses the observed shift in the A(1g) mode of the select MoSe(2) deposits. Our measurements provide in-situ evidence for hydrogen adsorption on MoSe(2) deposits at room temperature and insight into the possible active sites for hydrogen reactions on layered dichalcogenides at lower dimensions. Nature Publishing Group UK 2020-06-23 /pmc/articles/PMC7311385/ /pubmed/32576899 http://dx.doi.org/10.1038/s41598-020-67132-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Santiago, Peter Joseph
Ramirez, Francisco
Tavassol, Hadi
In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title_full In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title_fullStr In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title_full_unstemmed In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title_short In-situ Raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
title_sort in-situ raman analysis of hydrogenation in well-defined ultrathin molybdenum diselenide deposits synthesized through vapor phase deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311385/
https://www.ncbi.nlm.nih.gov/pubmed/32576899
http://dx.doi.org/10.1038/s41598-020-67132-0
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