Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to...

Descripción completa

Detalles Bibliográficos
Autores principales: Montoya, Eric Arturo, Chen, Jen-Ru, Ngelale, Randy, Lee, Han Kyu, Tseng, Hsin-Wei, Wan, Lei, Yang, En, Braganca, Patrick, Boyraz, Ozdal, Bagherzadeh, Nader, Nilsson, Mikael, Krivorotov, Ilya N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311406/
https://www.ncbi.nlm.nih.gov/pubmed/32576911
http://dx.doi.org/10.1038/s41598-020-67257-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311406/
https://www.ncbi.nlm.nih.gov/pubmed/32576911
http://dx.doi.org/10.1038/s41598-020-67257-2

Ejemplares similares