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Flexible low-voltage high-frequency organic thin-film transistors
The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or am...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7314562/ https://www.ncbi.nlm.nih.gov/pubmed/32671209 http://dx.doi.org/10.1126/sciadv.aaz5156 |
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author | Borchert, James W. Zschieschang, Ute Letzkus, Florian Giorgio, Michele Weitz, R. Thomas Caironi, Mario Burghartz, Joachim N. Ludwigs, Sabine Klauk, Hagen |
author_facet | Borchert, James W. Zschieschang, Ute Letzkus, Florian Giorgio, Michele Weitz, R. Thomas Caironi, Mario Burghartz, Joachim N. Ludwigs, Sabine Klauk, Hagen |
author_sort | Borchert, James W. |
collection | PubMed |
description | The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 10(10), subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques. |
format | Online Article Text |
id | pubmed-7314562 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-73145622020-07-14 Flexible low-voltage high-frequency organic thin-film transistors Borchert, James W. Zschieschang, Ute Letzkus, Florian Giorgio, Michele Weitz, R. Thomas Caironi, Mario Burghartz, Joachim N. Ludwigs, Sabine Klauk, Hagen Sci Adv Research Articles The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 10(10), subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques. American Association for the Advancement of Science 2020-05-20 /pmc/articles/PMC7314562/ /pubmed/32671209 http://dx.doi.org/10.1126/sciadv.aaz5156 Text en Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Borchert, James W. Zschieschang, Ute Letzkus, Florian Giorgio, Michele Weitz, R. Thomas Caironi, Mario Burghartz, Joachim N. Ludwigs, Sabine Klauk, Hagen Flexible low-voltage high-frequency organic thin-film transistors |
title | Flexible low-voltage high-frequency organic thin-film transistors |
title_full | Flexible low-voltage high-frequency organic thin-film transistors |
title_fullStr | Flexible low-voltage high-frequency organic thin-film transistors |
title_full_unstemmed | Flexible low-voltage high-frequency organic thin-film transistors |
title_short | Flexible low-voltage high-frequency organic thin-film transistors |
title_sort | flexible low-voltage high-frequency organic thin-film transistors |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7314562/ https://www.ncbi.nlm.nih.gov/pubmed/32671209 http://dx.doi.org/10.1126/sciadv.aaz5156 |
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