Cargando…

Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation

[Image: see text] Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by min...

Descripción completa

Detalles Bibliográficos
Autores principales: Yoo, Sung Tae, Park, Kyu Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7331211/
https://www.ncbi.nlm.nih.gov/pubmed/32637836
http://dx.doi.org/10.1021/acsomega.0c01824
_version_ 1783553276973678592
author Yoo, Sung Tae
Park, Kyu Chang
author_facet Yoo, Sung Tae
Park, Kyu Chang
author_sort Yoo, Sung Tae
collection PubMed
description [Image: see text] Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing processes of far UVC generation. Here, the sapphire wafer is evaluated for far UVC light generation using electron beam irradiation with carbon nanotube (CNT) emitters. A CNT-based cold cathode electron beam (C-beam) that emits electrons and accelerated onto κ-Al(2)O(3) of the sapphire wafer was used as an excitation source to demonstrate high-power far UVC light generation. High-efficiency 226 nm far UVC is made with a power conversion efficiency of 0.87% and a light-emitting area of 960 mm(2). Far UVC generation depends on the input power and the crystallinity of sapphire wafers.
format Online
Article
Text
id pubmed-7331211
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-73312112020-07-06 Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation Yoo, Sung Tae Park, Kyu Chang ACS Omega [Image: see text] Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing processes of far UVC generation. Here, the sapphire wafer is evaluated for far UVC light generation using electron beam irradiation with carbon nanotube (CNT) emitters. A CNT-based cold cathode electron beam (C-beam) that emits electrons and accelerated onto κ-Al(2)O(3) of the sapphire wafer was used as an excitation source to demonstrate high-power far UVC light generation. High-efficiency 226 nm far UVC is made with a power conversion efficiency of 0.87% and a light-emitting area of 960 mm(2). Far UVC generation depends on the input power and the crystallinity of sapphire wafers. American Chemical Society 2020-06-15 /pmc/articles/PMC7331211/ /pubmed/32637836 http://dx.doi.org/10.1021/acsomega.0c01824 Text en Copyright © 2020 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Yoo, Sung Tae
Park, Kyu Chang
Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title_full Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title_fullStr Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title_full_unstemmed Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title_short Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
title_sort sapphire wafer for 226 nm far uvc generation with carbon nanotube-based cold cathode electron beam (c-beam) irradiation
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7331211/
https://www.ncbi.nlm.nih.gov/pubmed/32637836
http://dx.doi.org/10.1021/acsomega.0c01824
work_keys_str_mv AT yoosungtae sapphirewaferfor226nmfaruvcgenerationwithcarbonnanotubebasedcoldcathodeelectronbeamcbeamirradiation
AT parkkyuchang sapphirewaferfor226nmfaruvcgenerationwithcarbonnanotubebasedcoldcathodeelectronbeamcbeamirradiation