Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density...

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Detalles Bibliográficos
Autores principales: Li, Jinlan, Meng, Chenxu, Yu, Le, Li, Yun, Yan, Feng, Han, Ping, Ji, Xiaoli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345170/
https://www.ncbi.nlm.nih.gov/pubmed/32599702
http://dx.doi.org/10.3390/mi11060609

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345170/
https://www.ncbi.nlm.nih.gov/pubmed/32599702
http://dx.doi.org/10.3390/mi11060609

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