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On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithograph...

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Autores principales: Sheikhi, Moheb, Dai, Yijun, Cui, Mei, Li, Liang, Liu, Jianzhe, Lan, Wenan, Jiang, Rongrong, Guo, Wei, Chee, Kuan W.A., Ye, Jichun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345201/
https://www.ncbi.nlm.nih.gov/pubmed/32516889
http://dx.doi.org/10.3390/mi11060572
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author Sheikhi, Moheb
Dai, Yijun
Cui, Mei
Li, Liang
Liu, Jianzhe
Lan, Wenan
Jiang, Rongrong
Guo, Wei
Chee, Kuan W.A.
Ye, Jichun
author_facet Sheikhi, Moheb
Dai, Yijun
Cui, Mei
Li, Liang
Liu, Jianzhe
Lan, Wenan
Jiang, Rongrong
Guo, Wei
Chee, Kuan W.A.
Ye, Jichun
author_sort Sheikhi, Moheb
collection PubMed
description The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices.
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spelling pubmed-73452012020-07-09 On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes Sheikhi, Moheb Dai, Yijun Cui, Mei Li, Liang Liu, Jianzhe Lan, Wenan Jiang, Rongrong Guo, Wei Chee, Kuan W.A. Ye, Jichun Micromachines (Basel) Article The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices. MDPI 2020-06-05 /pmc/articles/PMC7345201/ /pubmed/32516889 http://dx.doi.org/10.3390/mi11060572 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sheikhi, Moheb
Dai, Yijun
Cui, Mei
Li, Liang
Liu, Jianzhe
Lan, Wenan
Jiang, Rongrong
Guo, Wei
Chee, Kuan W.A.
Ye, Jichun
On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title_full On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title_fullStr On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title_full_unstemmed On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title_short On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
title_sort on the luminescence properties and surface passivation mechanism of iii- and n-polar nanopillar ultraviolet multiple-quantum-well light emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345201/
https://www.ncbi.nlm.nih.gov/pubmed/32516889
http://dx.doi.org/10.3390/mi11060572
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