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On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithograph...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345201/ https://www.ncbi.nlm.nih.gov/pubmed/32516889 http://dx.doi.org/10.3390/mi11060572 |
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author | Sheikhi, Moheb Dai, Yijun Cui, Mei Li, Liang Liu, Jianzhe Lan, Wenan Jiang, Rongrong Guo, Wei Chee, Kuan W.A. Ye, Jichun |
author_facet | Sheikhi, Moheb Dai, Yijun Cui, Mei Li, Liang Liu, Jianzhe Lan, Wenan Jiang, Rongrong Guo, Wei Chee, Kuan W.A. Ye, Jichun |
author_sort | Sheikhi, Moheb |
collection | PubMed |
description | The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices. |
format | Online Article Text |
id | pubmed-7345201 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-73452012020-07-09 On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes Sheikhi, Moheb Dai, Yijun Cui, Mei Li, Liang Liu, Jianzhe Lan, Wenan Jiang, Rongrong Guo, Wei Chee, Kuan W.A. Ye, Jichun Micromachines (Basel) Article The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices. MDPI 2020-06-05 /pmc/articles/PMC7345201/ /pubmed/32516889 http://dx.doi.org/10.3390/mi11060572 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sheikhi, Moheb Dai, Yijun Cui, Mei Li, Liang Liu, Jianzhe Lan, Wenan Jiang, Rongrong Guo, Wei Chee, Kuan W.A. Ye, Jichun On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title | On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title_full | On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title_fullStr | On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title_full_unstemmed | On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title_short | On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes |
title_sort | on the luminescence properties and surface passivation mechanism of iii- and n-polar nanopillar ultraviolet multiple-quantum-well light emitting diodes |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345201/ https://www.ncbi.nlm.nih.gov/pubmed/32516889 http://dx.doi.org/10.3390/mi11060572 |
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