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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage

This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric c...

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Detalles Bibliográficos
Autor principal: Choi, Woo Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345952/
https://www.ncbi.nlm.nih.gov/pubmed/32471138
http://dx.doi.org/10.3390/mi11060543
Descripción
Sumario:This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.