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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage

This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric c...

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Detalles Bibliográficos
Autor principal: Choi, Woo Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345952/
https://www.ncbi.nlm.nih.gov/pubmed/32471138
http://dx.doi.org/10.3390/mi11060543
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author Choi, Woo Young
author_facet Choi, Woo Young
author_sort Choi, Woo Young
collection PubMed
description This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.
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spelling pubmed-73459522020-07-09 Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage Choi, Woo Young Micromachines (Basel) Article This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant. MDPI 2020-05-27 /pmc/articles/PMC7345952/ /pubmed/32471138 http://dx.doi.org/10.3390/mi11060543 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Choi, Woo Young
Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title_full Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title_fullStr Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title_full_unstemmed Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title_short Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
title_sort negative capacitance vacuum channel transistors for low operating voltage
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345952/
https://www.ncbi.nlm.nih.gov/pubmed/32471138
http://dx.doi.org/10.3390/mi11060543
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