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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric c...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345952/ https://www.ncbi.nlm.nih.gov/pubmed/32471138 http://dx.doi.org/10.3390/mi11060543 |
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author | Choi, Woo Young |
author_facet | Choi, Woo Young |
author_sort | Choi, Woo Young |
collection | PubMed |
description | This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant. |
format | Online Article Text |
id | pubmed-7345952 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-73459522020-07-09 Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage Choi, Woo Young Micromachines (Basel) Article This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant. MDPI 2020-05-27 /pmc/articles/PMC7345952/ /pubmed/32471138 http://dx.doi.org/10.3390/mi11060543 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Choi, Woo Young Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title_full | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title_fullStr | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title_full_unstemmed | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title_short | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage |
title_sort | negative capacitance vacuum channel transistors for low operating voltage |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345952/ https://www.ncbi.nlm.nih.gov/pubmed/32471138 http://dx.doi.org/10.3390/mi11060543 |
work_keys_str_mv | AT choiwooyoung negativecapacitancevacuumchanneltransistorsforlowoperatingvoltage |