Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling

Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stre...

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Detalles Bibliográficos
Autores principales: Tholapi, Rajkiran, Gallard, Manon, Burle, Nelly, Guichet, Christophe, Escoubas, Stephanie, Putero, Magali, Mocuta, Cristian, Richard, Marie-Ingrid, Chahine, Rebecca, Sabbione, Chiara, Bernard, Mathieu, Fellouh, Leila, Noé, Pierre, Thomas, Olivier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353090/
https://www.ncbi.nlm.nih.gov/pubmed/32604948
http://dx.doi.org/10.3390/nano10061247

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