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Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga(2)O(3) Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

In this work, we have achieved synthesizing large-area high-density β-Ga(2)O(3) nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of t...

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Detalles Bibliográficos
Autores principales: Jia, Chunyang, Jeon, Dae-Woo, Xu, Jianlong, Yi, Xiaoyan, Park, Ji-Hyeon, Zhang, Yiyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353159/
https://www.ncbi.nlm.nih.gov/pubmed/32481612
http://dx.doi.org/10.3390/nano10061031
Descripción
Sumario:In this work, we have achieved synthesizing large-area high-density β-Ga(2)O(3) nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga(2)O(3) nanowires consist of a single-crystal monoclinic structure, which exhibits strong ([Formula: see text] 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga(2)O(3) nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga(2)O(3) nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga(2)O(3) nanowires is also presented.