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Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga(2)O(3) Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition
In this work, we have achieved synthesizing large-area high-density β-Ga(2)O(3) nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of t...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353159/ https://www.ncbi.nlm.nih.gov/pubmed/32481612 http://dx.doi.org/10.3390/nano10061031 |
Sumario: | In this work, we have achieved synthesizing large-area high-density β-Ga(2)O(3) nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga(2)O(3) nanowires consist of a single-crystal monoclinic structure, which exhibits strong ([Formula: see text] 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga(2)O(3) nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga(2)O(3) nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga(2)O(3) nanowires is also presented. |
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