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Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353260/ https://www.ncbi.nlm.nih.gov/pubmed/32570877 http://dx.doi.org/10.3390/nano10061186 |
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author | Kang, Soo Cheol Kim, So Young Lee, Sang Kyung Kim, Kiyung Allouche, Billal Hwang, Hyeon Jun Lee, Byoung Hun |
author_facet | Kang, Soo Cheol Kim, So Young Lee, Sang Kyung Kim, Kiyung Allouche, Billal Hwang, Hyeon Jun Lee, Byoung Hun |
author_sort | Kang, Soo Cheol |
collection | PubMed |
description | The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (I(D)) via trap-assisted tunneling when the gate voltage (V(G)) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m(2) V(−1)·s(−1) to 8.9 m(2) V(−1)·s(−1) and on-current increased by ~13%. |
format | Online Article Text |
id | pubmed-7353260 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-73532602020-07-15 Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors Kang, Soo Cheol Kim, So Young Lee, Sang Kyung Kim, Kiyung Allouche, Billal Hwang, Hyeon Jun Lee, Byoung Hun Nanomaterials (Basel) Article The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (I(D)) via trap-assisted tunneling when the gate voltage (V(G)) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m(2) V(−1)·s(−1) to 8.9 m(2) V(−1)·s(−1) and on-current increased by ~13%. MDPI 2020-06-18 /pmc/articles/PMC7353260/ /pubmed/32570877 http://dx.doi.org/10.3390/nano10061186 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kang, Soo Cheol Kim, So Young Lee, Sang Kyung Kim, Kiyung Allouche, Billal Hwang, Hyeon Jun Lee, Byoung Hun Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title_full | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title_fullStr | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title_full_unstemmed | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title_short | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
title_sort | channel defect profiling and passivation for zno thin-film transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353260/ https://www.ncbi.nlm.nih.gov/pubmed/32570877 http://dx.doi.org/10.3390/nano10061186 |
work_keys_str_mv | AT kangsoocheol channeldefectprofilingandpassivationforznothinfilmtransistors AT kimsoyoung channeldefectprofilingandpassivationforznothinfilmtransistors AT leesangkyung channeldefectprofilingandpassivationforznothinfilmtransistors AT kimkiyung channeldefectprofilingandpassivationforznothinfilmtransistors AT allouchebillal channeldefectprofilingandpassivationforznothinfilmtransistors AT hwanghyeonjun channeldefectprofilingandpassivationforznothinfilmtransistors AT leebyounghun channeldefectprofilingandpassivationforznothinfilmtransistors |