Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...

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Detalles Bibliográficos
Autores principales: Kang, Soo Cheol, Kim, So Young, Lee, Sang Kyung, Kim, Kiyung, Allouche, Billal, Hwang, Hyeon Jun, Lee, Byoung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353260/
https://www.ncbi.nlm.nih.gov/pubmed/32570877
http://dx.doi.org/10.3390/nano10061186

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353260/
https://www.ncbi.nlm.nih.gov/pubmed/32570877
http://dx.doi.org/10.3390/nano10061186

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