Cargando…
Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...
Autores principales: | Kang, Soo Cheol, Kim, So Young, Lee, Sang Kyung, Kim, Kiyung, Allouche, Billal, Hwang, Hyeon Jun, Lee, Byoung Hun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353260/ https://www.ncbi.nlm.nih.gov/pubmed/32570877 http://dx.doi.org/10.3390/nano10061186 |
Ejemplares similares
-
Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
por: Kumaresan, Yogeenth, et al.
Publicado: (2016) -
High-mobility ambipolar ZnO-graphene hybrid thin film transistors
por: Song, Wooseok, et al.
Publicado: (2014) -
ZnO thin-film transistors for cost-efficient flexible electronics
por: Vidor, Fábio Fedrizzi, et al.
Publicado: (2017) -
Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors
por: Yoon, Minho
Publicado: (2023) -
Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors
por: Wan, Liaojun, et al.
Publicado: (2018)