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Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids
Vanadium nitride (VN) shows promising electrochemical properties as an energy storage devices electrode, specifically in supercapacitors. However, the pseudocapacitive charge storage in aqueous electrolytes shows mediocre performance. Herein, we judiciously demonstrate an impressive pseudocapacitor...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353334/ https://www.ncbi.nlm.nih.gov/pubmed/32531987 http://dx.doi.org/10.3390/nano10061141 |
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author | Su, Hailan Xiong, Tuzhi Tan, Qirong Yang, Fang Appadurai, Paul B. S. Afuwape, Afeez A. Balogun, M.-Sadeeq (Jie Tang) Huang, Yongchao Guo, Kunkun |
author_facet | Su, Hailan Xiong, Tuzhi Tan, Qirong Yang, Fang Appadurai, Paul B. S. Afuwape, Afeez A. Balogun, M.-Sadeeq (Jie Tang) Huang, Yongchao Guo, Kunkun |
author_sort | Su, Hailan |
collection | PubMed |
description | Vanadium nitride (VN) shows promising electrochemical properties as an energy storage devices electrode, specifically in supercapacitors. However, the pseudocapacitive charge storage in aqueous electrolytes shows mediocre performance. Herein, we judiciously demonstrate an impressive pseudocapacitor performance by hybridizing VN nanowires with pseudocapacitive 2D-layered MoS(2) nanosheets. Arising from the interfacial engineering and pseudocapacitive synergistic effect between the VN and MoS(2), the areal capacitance of VN/MoS(2) hybrid reaches 3187.30 mF cm(−2), which is sevenfold higher than the pristine VN (447.28 mF cm(−2)) at a current density of 2.0 mA cm(−2). In addition, an asymmetric pseudocapacitor assembled based on VN/MoS(2) anode and TiN coated with MnO(2) (TiN/MnO(2)) cathode achieves a remarkable volumetric capacitance of 4.52 F cm(−3) and energy density of 2.24 mWh cm(−3) at a current density of 6.0 mA cm(−2). This work opens a new opportunity for the development of high-performance electrodes in unfavorable electrolytes towards designing high areal-capacitance electrode materials for supercapacitors and beyond. |
format | Online Article Text |
id | pubmed-7353334 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-73533342020-07-15 Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids Su, Hailan Xiong, Tuzhi Tan, Qirong Yang, Fang Appadurai, Paul B. S. Afuwape, Afeez A. Balogun, M.-Sadeeq (Jie Tang) Huang, Yongchao Guo, Kunkun Nanomaterials (Basel) Article Vanadium nitride (VN) shows promising electrochemical properties as an energy storage devices electrode, specifically in supercapacitors. However, the pseudocapacitive charge storage in aqueous electrolytes shows mediocre performance. Herein, we judiciously demonstrate an impressive pseudocapacitor performance by hybridizing VN nanowires with pseudocapacitive 2D-layered MoS(2) nanosheets. Arising from the interfacial engineering and pseudocapacitive synergistic effect between the VN and MoS(2), the areal capacitance of VN/MoS(2) hybrid reaches 3187.30 mF cm(−2), which is sevenfold higher than the pristine VN (447.28 mF cm(−2)) at a current density of 2.0 mA cm(−2). In addition, an asymmetric pseudocapacitor assembled based on VN/MoS(2) anode and TiN coated with MnO(2) (TiN/MnO(2)) cathode achieves a remarkable volumetric capacitance of 4.52 F cm(−3) and energy density of 2.24 mWh cm(−3) at a current density of 6.0 mA cm(−2). This work opens a new opportunity for the development of high-performance electrodes in unfavorable electrolytes towards designing high areal-capacitance electrode materials for supercapacitors and beyond. MDPI 2020-06-10 /pmc/articles/PMC7353334/ /pubmed/32531987 http://dx.doi.org/10.3390/nano10061141 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Su, Hailan Xiong, Tuzhi Tan, Qirong Yang, Fang Appadurai, Paul B. S. Afuwape, Afeez A. Balogun, M.-Sadeeq (Jie Tang) Huang, Yongchao Guo, Kunkun Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title | Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title_full | Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title_fullStr | Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title_full_unstemmed | Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title_short | Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids |
title_sort | asymmetric pseudocapacitors based on interfacial engineering of vanadium nitride hybrids |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353334/ https://www.ncbi.nlm.nih.gov/pubmed/32531987 http://dx.doi.org/10.3390/nano10061141 |
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