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Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T

Metal–insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO(2)) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electron correlation or the structur...

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Autores principales: Matsuda, Yasuhiro H., Nakamura, Daisuke, Ikeda, Akihiko, Takeyama, Shojiro, Suga, Yuki, Nakahara, Hayato, Muraoka, Yuji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367819/
https://www.ncbi.nlm.nih.gov/pubmed/32681051
http://dx.doi.org/10.1038/s41467-020-17416-w
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author Matsuda, Yasuhiro H.
Nakamura, Daisuke
Ikeda, Akihiko
Takeyama, Shojiro
Suga, Yuki
Nakahara, Hayato
Muraoka, Yuji
author_facet Matsuda, Yasuhiro H.
Nakamura, Daisuke
Ikeda, Akihiko
Takeyama, Shojiro
Suga, Yuki
Nakahara, Hayato
Muraoka, Yuji
author_sort Matsuda, Yasuhiro H.
collection PubMed
description Metal–insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO(2)) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electron correlation or the structural instability due to dimerised V ions is the more essential driving force behind this MI transition. Here, we show that an ultrahigh magnetic field of 500 T renders the insulator phase of tungsten (W)-doped VO(2) metallic. The spin Zeeman effect on the d electrons of the V ions dissociates the dimers in the insulating phase, resulting in the delocalisation of electrons. As the Mott–Hubbard gap essentially does not depend on the spin degree of freedom, the structural instability is likely to be the more essential driving force behind the MI transition.
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spelling pubmed-73678192020-07-21 Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T Matsuda, Yasuhiro H. Nakamura, Daisuke Ikeda, Akihiko Takeyama, Shojiro Suga, Yuki Nakahara, Hayato Muraoka, Yuji Nat Commun Article Metal–insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO(2)) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electron correlation or the structural instability due to dimerised V ions is the more essential driving force behind this MI transition. Here, we show that an ultrahigh magnetic field of 500 T renders the insulator phase of tungsten (W)-doped VO(2) metallic. The spin Zeeman effect on the d electrons of the V ions dissociates the dimers in the insulating phase, resulting in the delocalisation of electrons. As the Mott–Hubbard gap essentially does not depend on the spin degree of freedom, the structural instability is likely to be the more essential driving force behind the MI transition. Nature Publishing Group UK 2020-07-17 /pmc/articles/PMC7367819/ /pubmed/32681051 http://dx.doi.org/10.1038/s41467-020-17416-w Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Matsuda, Yasuhiro H.
Nakamura, Daisuke
Ikeda, Akihiko
Takeyama, Shojiro
Suga, Yuki
Nakahara, Hayato
Muraoka, Yuji
Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title_full Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title_fullStr Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title_full_unstemmed Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title_short Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
title_sort magnetic-field-induced insulator–metal transition in w-doped vo(2) at 500 t
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367819/
https://www.ncbi.nlm.nih.gov/pubmed/32681051
http://dx.doi.org/10.1038/s41467-020-17416-w
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