Cargando…
Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
Metal–insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO(2)) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electron correlation or the structur...
Autores principales: | Matsuda, Yasuhiro H., Nakamura, Daisuke, Ikeda, Akihiko, Takeyama, Shojiro, Suga, Yuki, Nakahara, Hayato, Muraoka, Yuji |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367819/ https://www.ncbi.nlm.nih.gov/pubmed/32681051 http://dx.doi.org/10.1038/s41467-020-17416-w |
Ejemplares similares
-
Unraveling Metal-insulator Transition Mechanism of VO(2 )Triggered by Tungsten Doping
por: Tan, Xiaogang, et al.
Publicado: (2012) -
Signature of spin-triplet exciton condensations in LaCoO(3) at ultrahigh magnetic fields up to 600 T
por: Ikeda, Akihiko, et al.
Publicado: (2023) -
Shape-controlled synthesis and influence of W doping and oxygen nonstoichiometry on the
phase transition of VO(2)
por: Chen, Ru, et al.
Publicado: (2015) -
Temperature-dependent infrared ellipsometry of Mo-doped VO(2) thin films across the insulator to metal transition
por: Amador-Alvarado, S., et al.
Publicado: (2020) -
The influence of structural disorder and phonon on metal-to-insulator transition of VO(2)
por: Hwang, In-Hui, et al.
Publicado: (2017)