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Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers
Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, w...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367820/ https://www.ncbi.nlm.nih.gov/pubmed/32681024 http://dx.doi.org/10.1038/s41467-020-17463-3 |
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author | Kang, Min-Gu Go, Gyungchoon Kim, Kyoung-Whan Choi, Jong-Guk Park, Byong-Guk Lee, Kyung-Jin |
author_facet | Kang, Min-Gu Go, Gyungchoon Kim, Kyoung-Whan Choi, Jong-Guk Park, Byong-Guk Lee, Kyung-Jin |
author_sort | Kang, Min-Gu |
collection | PubMed |
description | Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, whose sign is always positive regardless of the sign of spin Hall conductivity of normal metals. Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to interfacial spin-orbit coupling at normal metal/ferromagnet interfaces can give rise to negative spin Hall magnetoresistance. Given that recent studies found the conversion from charge currents to spin currents at normal metal/ferromagnet interfaces, our work provides a missing proof of its reciprocal spin-current-to-charge-current conversion at same interface. Our result suggests that interfacial spin-orbit coupling effect can dominate over bulk effects, thereby demanding interface engineering for advanced spintronics devices. |
format | Online Article Text |
id | pubmed-7367820 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-73678202020-07-21 Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers Kang, Min-Gu Go, Gyungchoon Kim, Kyoung-Whan Choi, Jong-Guk Park, Byong-Guk Lee, Kyung-Jin Nat Commun Article Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, whose sign is always positive regardless of the sign of spin Hall conductivity of normal metals. Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to interfacial spin-orbit coupling at normal metal/ferromagnet interfaces can give rise to negative spin Hall magnetoresistance. Given that recent studies found the conversion from charge currents to spin currents at normal metal/ferromagnet interfaces, our work provides a missing proof of its reciprocal spin-current-to-charge-current conversion at same interface. Our result suggests that interfacial spin-orbit coupling effect can dominate over bulk effects, thereby demanding interface engineering for advanced spintronics devices. Nature Publishing Group UK 2020-07-17 /pmc/articles/PMC7367820/ /pubmed/32681024 http://dx.doi.org/10.1038/s41467-020-17463-3 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Kang, Min-Gu Go, Gyungchoon Kim, Kyoung-Whan Choi, Jong-Guk Park, Byong-Guk Lee, Kyung-Jin Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title | Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title_full | Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title_fullStr | Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title_full_unstemmed | Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title_short | Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers |
title_sort | negative spin hall magnetoresistance of normal metal/ferromagnet bilayers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367820/ https://www.ncbi.nlm.nih.gov/pubmed/32681024 http://dx.doi.org/10.1038/s41467-020-17463-3 |
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