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Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering

Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used i...

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Autores principales: Deng, Yu-Hao, Yang, Zhen-Qian, Ma, Ren-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7371768/
https://www.ncbi.nlm.nih.gov/pubmed/32691332
http://dx.doi.org/10.1186/s40580-020-00236-5
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author Deng, Yu-Hao
Yang, Zhen-Qian
Ma, Ren-Min
author_facet Deng, Yu-Hao
Yang, Zhen-Qian
Ma, Ren-Min
author_sort Deng, Yu-Hao
collection PubMed
description Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used in a variety of devices with performance approaching or over the devices based on conventional materials. However, their solution based growth method is intrinsically challenge to grow large scale single-crystalline thin film due to the random nucleation and isotropous growth of the crystal. Here, we report the growth of centimeter-scale perovskite single-crystalline thin films by controlling the nucleation density and growth rate of the crystal under a spatially confined growth condition. The hydrophobic treatment on substrates inhibits nucleation and accelerates the growth of single-crystalline thin film, providing enough space for initial nucleus growing up quickly without touching each other. Single-crystalline perovskite thin-film with an aspect ratio of 1000 (1 cm in side length, 10 μm in thickness) has been successfully grown. The low trap density and the high mobility of the as-grown thin film show a high crystallinity. The photodetector based on the perovskite thin film has achieved a gain ~ 10(4), benefitting from the short transit time of the carries due to the high mobility and thin thickness of the active layer. Our work opens up a new route to grow large scale perovskite single-crystalline thin films, providing a platform to develop high- performance devices.
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spelling pubmed-73717682020-07-22 Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering Deng, Yu-Hao Yang, Zhen-Qian Ma, Ren-Min Nano Converg Full Paper Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used in a variety of devices with performance approaching or over the devices based on conventional materials. However, their solution based growth method is intrinsically challenge to grow large scale single-crystalline thin film due to the random nucleation and isotropous growth of the crystal. Here, we report the growth of centimeter-scale perovskite single-crystalline thin films by controlling the nucleation density and growth rate of the crystal under a spatially confined growth condition. The hydrophobic treatment on substrates inhibits nucleation and accelerates the growth of single-crystalline thin film, providing enough space for initial nucleus growing up quickly without touching each other. Single-crystalline perovskite thin-film with an aspect ratio of 1000 (1 cm in side length, 10 μm in thickness) has been successfully grown. The low trap density and the high mobility of the as-grown thin film show a high crystallinity. The photodetector based on the perovskite thin film has achieved a gain ~ 10(4), benefitting from the short transit time of the carries due to the high mobility and thin thickness of the active layer. Our work opens up a new route to grow large scale perovskite single-crystalline thin films, providing a platform to develop high- performance devices. Springer Singapore 2020-07-20 /pmc/articles/PMC7371768/ /pubmed/32691332 http://dx.doi.org/10.1186/s40580-020-00236-5 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Full Paper
Deng, Yu-Hao
Yang, Zhen-Qian
Ma, Ren-Min
Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title_full Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title_fullStr Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title_full_unstemmed Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title_short Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
title_sort growth of centimeter-scale perovskite single-crystalline thin film via surface engineering
topic Full Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7371768/
https://www.ncbi.nlm.nih.gov/pubmed/32691332
http://dx.doi.org/10.1186/s40580-020-00236-5
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