Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS(2) field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported M...

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Detalles Bibliográficos
Autores principales: Huang, Xinnan, Yao, Yao, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Jin, Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7372460/
https://www.ncbi.nlm.nih.gov/pubmed/32605183
http://dx.doi.org/10.3390/ma13132896

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7372460/
https://www.ncbi.nlm.nih.gov/pubmed/32605183
http://dx.doi.org/10.3390/ma13132896

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