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Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS(2) field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported M...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7372460/ https://www.ncbi.nlm.nih.gov/pubmed/32605183 http://dx.doi.org/10.3390/ma13132896 |