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Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors. The fabricated heterojunction demonstrated NDR phenomena at 20 a...

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Detalles Bibliográficos
Autores principales: Sang, Dandan, Liu, Jiaoli, Wang, Xiaofeng, Zhang, Dong, Ke, Feng, Hu, Haiquan, Wang, Wenjun, Zhang, Bingyuan, Li, Hongdong, Liu, Bo, Wang, Qinglin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7374258/
https://www.ncbi.nlm.nih.gov/pubmed/32760696
http://dx.doi.org/10.3389/fchem.2020.00531
Descripción
Sumario:In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors. The fabricated heterojunction demonstrated NDR phenomena at 20 and 80°C. However, these effects disappeared followed by the occurrence of rectification characteristics at 120°C. At higher temperatures, the forward current was increased, and the turn-on voltage and peak-to-valley current ratio (PVCR) were reduced. In addition, the underlying mechanisms of carrier tunneling conduction at different temperature and bias voltages were analyzed through schematic energy band diagrams and semiconductor theoretical models. High-temperature NDR properties of the n-ZnO NRs/p-degenerated diamond heterojunction can extend the applications of resistive switching and resonant tunneling diodes, especially in high-temperature, and high-power environments.