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Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization

Spin chiral systems with Dzyaloshinskii–Moriya (DM) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance (MR) and electronic structur...

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Autores principales: Banik, Soma, Chattopadhyay, M. K., Tripathi, Shilpa, Rawat, R., Jha, S. N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7374744/
https://www.ncbi.nlm.nih.gov/pubmed/32694707
http://dx.doi.org/10.1038/s41598-020-67617-y
_version_ 1783561755267432448
author Banik, Soma
Chattopadhyay, M. K.
Tripathi, Shilpa
Rawat, R.
Jha, S. N.
author_facet Banik, Soma
Chattopadhyay, M. K.
Tripathi, Shilpa
Rawat, R.
Jha, S. N.
author_sort Banik, Soma
collection PubMed
description Spin chiral systems with Dzyaloshinskii–Moriya (DM) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance (MR) and electronic structure of a non-centrosymmetric compound CrSi with B20 crystal structure. Both magnetization and MR shows competing ferromagnetic (FM) and antiferromagnetic (AFM) correlations with the FM correlations being comparatively weaker indicating the presence of DM interaction in CrSi. A large positive MR [Formula: see text] obtained at 5 K and 5 T magnetic field arises due to the stronger AFM correlations. Resonant photoemission shows both localized and itinerant nature of Cr 3d electrons to be present in CrSi and this is supported by the temperature dependence of magnetic susceptibility. Drastic variation in the density of states along with valence band broadening at low temperature indicates the increase in hybridization between Cr 3d and Si 3s–3p states which enhances the localization effects. Spin polarized itinerant Cr 3d electrons give rise to AFM spin density wave in CrSi. Magnetic interaction between the localized and itinerant Cr 3d electrons are found to be crucial for realizing DM interaction in this system. Spectral density of states derived from high resolution valence band measurements provides evidence of electronic topological transition in CrSi. Large density of polarized itinerant electrons which varies with temperature and the large positive MR with AFM correlations suggests CrSi as a potential candidate for both the thermoelectric and spintronics applications.
format Online
Article
Text
id pubmed-7374744
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-73747442020-07-22 Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization Banik, Soma Chattopadhyay, M. K. Tripathi, Shilpa Rawat, R. Jha, S. N. Sci Rep Article Spin chiral systems with Dzyaloshinskii–Moriya (DM) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance (MR) and electronic structure of a non-centrosymmetric compound CrSi with B20 crystal structure. Both magnetization and MR shows competing ferromagnetic (FM) and antiferromagnetic (AFM) correlations with the FM correlations being comparatively weaker indicating the presence of DM interaction in CrSi. A large positive MR [Formula: see text] obtained at 5 K and 5 T magnetic field arises due to the stronger AFM correlations. Resonant photoemission shows both localized and itinerant nature of Cr 3d electrons to be present in CrSi and this is supported by the temperature dependence of magnetic susceptibility. Drastic variation in the density of states along with valence band broadening at low temperature indicates the increase in hybridization between Cr 3d and Si 3s–3p states which enhances the localization effects. Spin polarized itinerant Cr 3d electrons give rise to AFM spin density wave in CrSi. Magnetic interaction between the localized and itinerant Cr 3d electrons are found to be crucial for realizing DM interaction in this system. Spectral density of states derived from high resolution valence band measurements provides evidence of electronic topological transition in CrSi. Large density of polarized itinerant electrons which varies with temperature and the large positive MR with AFM correlations suggests CrSi as a potential candidate for both the thermoelectric and spintronics applications. Nature Publishing Group UK 2020-07-21 /pmc/articles/PMC7374744/ /pubmed/32694707 http://dx.doi.org/10.1038/s41598-020-67617-y Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Banik, Soma
Chattopadhyay, M. K.
Tripathi, Shilpa
Rawat, R.
Jha, S. N.
Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title_full Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title_fullStr Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title_full_unstemmed Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title_short Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization
title_sort large positive magnetoresistance and dzyaloshinskii–moriya interaction in crsi driven by cr 3d localization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7374744/
https://www.ncbi.nlm.nih.gov/pubmed/32694707
http://dx.doi.org/10.1038/s41598-020-67617-y
work_keys_str_mv AT baniksoma largepositivemagnetoresistanceanddzyaloshinskiimoriyainteractionincrsidrivenbycr3dlocalization
AT chattopadhyaymk largepositivemagnetoresistanceanddzyaloshinskiimoriyainteractionincrsidrivenbycr3dlocalization
AT tripathishilpa largepositivemagnetoresistanceanddzyaloshinskiimoriyainteractionincrsidrivenbycr3dlocalization
AT rawatr largepositivemagnetoresistanceanddzyaloshinskiimoriyainteractionincrsidrivenbycr3dlocalization
AT jhasn largepositivemagnetoresistanceanddzyaloshinskiimoriyainteractionincrsidrivenbycr3dlocalization