Cargando…
Defect spectroscopy on the dielectric material aluminum oxide
A method for defect characterization is presented that allows to measure the activation energy, capture cross-section, and defect density in dielectric materials. This is exemplarily performed on aluminum oxide thin films deposited on hydrogen-terminated diamond. During the measurement, samples were...
Autores principales: | Oing, Dennis, Geller, Martin, Stahl, Lucas, Kerski, Jens, Lorke, Axel, Wöhrl, Nicolas |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7385164/ https://www.ncbi.nlm.nih.gov/pubmed/32719320 http://dx.doi.org/10.1038/s41598-020-69240-3 |
Ejemplares similares
-
Post-processing of real-time quantum event measurements for an optimal bandwidth
por: Kerski, J., et al.
Publicado: (2023) -
Broadband dielectric spectroscopy
por: Kremer, Friedrich, et al.
Publicado: (2002) -
Electron-beam induced nano-etching of suspended graphene
por: Sommer, Benedikt, et al.
Publicado: (2015) -
Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
por: Bolat, Sami, et al.
Publicado: (2020) -
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
por: Calzolaro, Anthony, et al.
Publicado: (2022)