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Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon

It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this...

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Detalles Bibliográficos
Autores principales:	Zhao, X., Huang, K., Bruckbauer, J., Shen, S., Zhu, C., Fletcher, P., Feng, P., Cai, Y., Bai, J., Trager-Cowan, C., Martin, R. W., Wang, T.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7387536/ https://www.ncbi.nlm.nih.gov/pubmed/32724185 http://dx.doi.org/10.1038/s41598-020-69609-4

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