Cargando…

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe...

Descripción completa

Detalles Bibliográficos
Autores principales: Bekdüz, Bilge, Kaya, Umut, Langer, Moritz, Mertin, Wolfgang, Bacher, Gerd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395096/
https://www.ncbi.nlm.nih.gov/pubmed/32737382
http://dx.doi.org/10.1038/s41598-020-69846-7
_version_ 1783565335214948352
author Bekdüz, Bilge
Kaya, Umut
Langer, Moritz
Mertin, Wolfgang
Bacher, Gerd
author_facet Bekdüz, Bilge
Kaya, Umut
Langer, Moritz
Mertin, Wolfgang
Bacher, Gerd
author_sort Bekdüz, Bilge
collection PubMed
description The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.
format Online
Article
Text
id pubmed-7395096
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-73950962020-08-03 Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD Bekdüz, Bilge Kaya, Umut Langer, Moritz Mertin, Wolfgang Bacher, Gerd Sci Rep Article The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD. Nature Publishing Group UK 2020-07-31 /pmc/articles/PMC7395096/ /pubmed/32737382 http://dx.doi.org/10.1038/s41598-020-69846-7 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Bekdüz, Bilge
Kaya, Umut
Langer, Moritz
Mertin, Wolfgang
Bacher, Gerd
Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title_full Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title_fullStr Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title_full_unstemmed Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title_short Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD
title_sort direct growth of graphene on ge(100) and ge(110) via thermal and plasma enhanced cvd
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395096/
https://www.ncbi.nlm.nih.gov/pubmed/32737382
http://dx.doi.org/10.1038/s41598-020-69846-7
work_keys_str_mv AT bekduzbilge directgrowthofgrapheneonge100andge110viathermalandplasmaenhancedcvd
AT kayaumut directgrowthofgrapheneonge100andge110viathermalandplasmaenhancedcvd
AT langermoritz directgrowthofgrapheneonge100andge110viathermalandplasmaenhancedcvd
AT mertinwolfgang directgrowthofgrapheneonge100andge110viathermalandplasmaenhancedcvd
AT bachergerd directgrowthofgrapheneonge100andge110viathermalandplasmaenhancedcvd