Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe...

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Detalles Bibliográficos
Autores principales: Bekdüz, Bilge, Kaya, Umut, Langer, Moritz, Mertin, Wolfgang, Bacher, Gerd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395096/
https://www.ncbi.nlm.nih.gov/pubmed/32737382
http://dx.doi.org/10.1038/s41598-020-69846-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395096/
https://www.ncbi.nlm.nih.gov/pubmed/32737382
http://dx.doi.org/10.1038/s41598-020-69846-7

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