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Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study

Two-dimensional transition metal dichalcogenides (2D TMDs), such as WS(2), are considered to have the potential for high-performance gas sensors. It is a pity that the interaction between gases and pristine 2D WS(2) as the sensitive element is too weak so that the sensor response is difficult to det...

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Autores principales: Cao, Jiamu, Zhou, Jing, Liu, Junfeng, Wang, Weiqi, Chen, Junyu, Shi, Jianing, Zhang, Yufeng, Liu, Xiaowei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7406579/
https://www.ncbi.nlm.nih.gov/pubmed/32757081
http://dx.doi.org/10.1186/s11671-020-03391-0
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author Cao, Jiamu
Zhou, Jing
Liu, Junfeng
Wang, Weiqi
Chen, Junyu
Shi, Jianing
Zhang, Yufeng
Liu, Xiaowei
author_facet Cao, Jiamu
Zhou, Jing
Liu, Junfeng
Wang, Weiqi
Chen, Junyu
Shi, Jianing
Zhang, Yufeng
Liu, Xiaowei
author_sort Cao, Jiamu
collection PubMed
description Two-dimensional transition metal dichalcogenides (2D TMDs), such as WS(2), are considered to have the potential for high-performance gas sensors. It is a pity that the interaction between gases and pristine 2D WS(2) as the sensitive element is too weak so that the sensor response is difficult to detect. Herein, the sensing capabilities of Al- and P-doped WS(2) to NO, NO(2), and SO(2) were evaluated. Especially, we considered selectivity to target gases and dopant concentration. Molecular models of the adsorption systems were constructed, and density functional theory (DFT) was used to explore the adsorption behaviors of these gases from the perspective of binding energy, band structure, and density of states (DOS). The results suggested that doping atoms could increase the adsorption strength between gas molecules and substrate. Besides, the sensitivity of P-doped WS(2) to NO and NO(2) was hardly affected by CO(2) or H(2)O. The sensitivity of Al-doped WS(2) to NO(2) and SO(2) was also hard to be affected by CO(2) or H(2)O. For NO detection, the WS(2) with 7.4% dopant concentration had better sensitive properties than that with a 3.7% dopant concentration. While for SO(2), the result was just the opposite. This work provided a comprehensive reference for choosing appropriate dopants (concentration) into 2D materials for sensing noxious gases.
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spelling pubmed-74065792020-08-13 Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study Cao, Jiamu Zhou, Jing Liu, Junfeng Wang, Weiqi Chen, Junyu Shi, Jianing Zhang, Yufeng Liu, Xiaowei Nanoscale Res Lett Nano Express Two-dimensional transition metal dichalcogenides (2D TMDs), such as WS(2), are considered to have the potential for high-performance gas sensors. It is a pity that the interaction between gases and pristine 2D WS(2) as the sensitive element is too weak so that the sensor response is difficult to detect. Herein, the sensing capabilities of Al- and P-doped WS(2) to NO, NO(2), and SO(2) were evaluated. Especially, we considered selectivity to target gases and dopant concentration. Molecular models of the adsorption systems were constructed, and density functional theory (DFT) was used to explore the adsorption behaviors of these gases from the perspective of binding energy, band structure, and density of states (DOS). The results suggested that doping atoms could increase the adsorption strength between gas molecules and substrate. Besides, the sensitivity of P-doped WS(2) to NO and NO(2) was hardly affected by CO(2) or H(2)O. The sensitivity of Al-doped WS(2) to NO(2) and SO(2) was also hard to be affected by CO(2) or H(2)O. For NO detection, the WS(2) with 7.4% dopant concentration had better sensitive properties than that with a 3.7% dopant concentration. While for SO(2), the result was just the opposite. This work provided a comprehensive reference for choosing appropriate dopants (concentration) into 2D materials for sensing noxious gases. Springer US 2020-08-05 /pmc/articles/PMC7406579/ /pubmed/32757081 http://dx.doi.org/10.1186/s11671-020-03391-0 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Cao, Jiamu
Zhou, Jing
Liu, Junfeng
Wang, Weiqi
Chen, Junyu
Shi, Jianing
Zhang, Yufeng
Liu, Xiaowei
Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title_full Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title_fullStr Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title_full_unstemmed Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title_short Sensing Behavior of Two Dimensional Al- and P-Doped WS(2) Toward NO, NO(2), and SO(2): an Ab Initio Study
title_sort sensing behavior of two dimensional al- and p-doped ws(2) toward no, no(2), and so(2): an ab initio study
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7406579/
https://www.ncbi.nlm.nih.gov/pubmed/32757081
http://dx.doi.org/10.1186/s11671-020-03391-0
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