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Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing

The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the co...

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Autores principales: Ye, Heqing, Kwon, Hyeok-Jin, Tang, Xiaowu, Lee, Dong Yun, Nam, Sooji, Kim, Se Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407936/
https://www.ncbi.nlm.nih.gov/pubmed/32635242
http://dx.doi.org/10.3390/nano10071304
_version_ 1783567721076621312
author Ye, Heqing
Kwon, Hyeok-Jin
Tang, Xiaowu
Lee, Dong Yun
Nam, Sooji
Kim, Se Hyun
author_facet Ye, Heqing
Kwon, Hyeok-Jin
Tang, Xiaowu
Lee, Dong Yun
Nam, Sooji
Kim, Se Hyun
author_sort Ye, Heqing
collection PubMed
description The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.
format Online
Article
Text
id pubmed-7407936
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-74079362020-08-12 Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing Ye, Heqing Kwon, Hyeok-Jin Tang, Xiaowu Lee, Dong Yun Nam, Sooji Kim, Se Hyun Nanomaterials (Basel) Article The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology. MDPI 2020-07-03 /pmc/articles/PMC7407936/ /pubmed/32635242 http://dx.doi.org/10.3390/nano10071304 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ye, Heqing
Kwon, Hyeok-Jin
Tang, Xiaowu
Lee, Dong Yun
Nam, Sooji
Kim, Se Hyun
Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title_full Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title_fullStr Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title_full_unstemmed Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title_short Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
title_sort direct patterned zinc-tin-oxide for solution-processed thin-film transistors and complementary inverter through electrohydrodynamic jet printing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407936/
https://www.ncbi.nlm.nih.gov/pubmed/32635242
http://dx.doi.org/10.3390/nano10071304
work_keys_str_mv AT yeheqing directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting
AT kwonhyeokjin directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting
AT tangxiaowu directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting
AT leedongyun directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting
AT namsooji directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting
AT kimsehyun directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting