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Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the co...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407936/ https://www.ncbi.nlm.nih.gov/pubmed/32635242 http://dx.doi.org/10.3390/nano10071304 |
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author | Ye, Heqing Kwon, Hyeok-Jin Tang, Xiaowu Lee, Dong Yun Nam, Sooji Kim, Se Hyun |
author_facet | Ye, Heqing Kwon, Hyeok-Jin Tang, Xiaowu Lee, Dong Yun Nam, Sooji Kim, Se Hyun |
author_sort | Ye, Heqing |
collection | PubMed |
description | The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology. |
format | Online Article Text |
id | pubmed-7407936 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74079362020-08-12 Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing Ye, Heqing Kwon, Hyeok-Jin Tang, Xiaowu Lee, Dong Yun Nam, Sooji Kim, Se Hyun Nanomaterials (Basel) Article The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology. MDPI 2020-07-03 /pmc/articles/PMC7407936/ /pubmed/32635242 http://dx.doi.org/10.3390/nano10071304 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Ye, Heqing Kwon, Hyeok-Jin Tang, Xiaowu Lee, Dong Yun Nam, Sooji Kim, Se Hyun Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title | Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title_full | Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title_fullStr | Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title_full_unstemmed | Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title_short | Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing |
title_sort | direct patterned zinc-tin-oxide for solution-processed thin-film transistors and complementary inverter through electrohydrodynamic jet printing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407936/ https://www.ncbi.nlm.nih.gov/pubmed/32635242 http://dx.doi.org/10.3390/nano10071304 |
work_keys_str_mv | AT yeheqing directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting AT kwonhyeokjin directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting AT tangxiaowu directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting AT leedongyun directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting AT namsooji directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting AT kimsehyun directpatternedzinctinoxideforsolutionprocessedthinfilmtransistorsandcomplementaryinverterthroughelectrohydrodynamicjetprinting |