Cargando…

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review

In the last two decades, GaN nanostructures of various forms like nanowires (NWs), nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have been reported for gas sensing applications. In this paper, we have reviewed our group’s work and the works published by other groups o...

Descripción completa

Detalles Bibliográficos
Autores principales:	Khan, Md Ashfaque Hossain, Rao, Mulpuri V.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412445/ https://www.ncbi.nlm.nih.gov/pubmed/32668634 http://dx.doi.org/10.3390/s20143889

Ejemplares similares

Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature
por: Khan, Md Ashfaque Hossain, et al.
Publicado: (2021)

New 2D Structural Materials: Carbon–Gallium Nitride (CC–GaN) and Boron–Gallium Nitride (BN–GaN) Heterostructures—Materials Design Through Density Functional Theory
por: Elloh, Van W., et al.
Publicado: (2019)

New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN
por: Drygaś, Mariusz, et al.
Publicado: (2021)

Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)
por: Drygas, Mariusz, et al.
Publicado: (2022)

Gallium hydride vapor phase epitaxy of GaN nanowires
por: Zervos, Matthew, et al.
Publicado: (2011)

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
por: Ghazali, Norizzawati Mohd, et al.
Publicado: (2014)

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures
por: Sun, Wei, et al.
Publicado: (2017)

Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures
por: Forsberg, Mathias, et al.
Publicado: (2015)

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
por: Schilirò, Emanuela, et al.
Publicado: (2021)

Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
por: Guo, Jian, et al.
Publicado: (2019)

Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz
por: Roy, Biswadev, et al.
Publicado: (2020)

On the Role of Amides and Imides for Understanding GaN Syntheses from Ammonia Solution: Molecular Mechanics Models of Ammonia, Amide and Imide Interactions with Gallium Nitride
por: Wonglakhon, Tanakorn, et al.
Publicado: (2022)

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes
por: Park, Ji-Yeon, et al.
Publicado: (2015)

GaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes
por: Camacho-Mojica, Dulce C., et al.
Publicado: (2015)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
por: Jiang, Shuai, et al.
Publicado: (2023)

A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure
por: Park, Ji-Hyeon, et al.
Publicado: (2018)

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO(2), SO(2) and H(2)S
por: Khan, Md Ashfaque Hossain, et al.
Publicado: (2019)

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
por: Li, Liuan, et al.
Publicado: (2014)

Photonics with Gallium Nitride Nanowires
por: Alwadai, Norah, et al.
Publicado: (2022)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
por: Lin, Y. C., et al.
Publicado: (2020)

All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
por: Capuzzo, Giulia, et al.
Publicado: (2017)

Obtaining of Mg-Zn Co-Doped GaN Powders via Nitridation of the Ga-Mg-Zn Metallic Solution and Their Structural and Optical Properties
por: Gastellóu, Erick, et al.
Publicado: (2023)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors
por: Mishra, Monu, et al.
Publicado: (2018)

An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures
por: Sui, Jingyang, et al.
Publicado: (2020)

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
por: Austin, Aaron J., et al.
Publicado: (2020)

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
por: Khediri, Abdelkrim, et al.
Publicado: (2021)

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
por: Yang, Yannan, et al.
Publicado: (2023)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
por: Shih, Huan-Yu, et al.
Publicado: (2016)

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition
por: Fakhri, Makram A., et al.
Publicado: (2023)

Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations
por: Kempisty, Pawel, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_7tpvr7egn4b2m74bcs0h1bbqie