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Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer

Contrary to simplified theoretical models, atomistic calculations presented here reveal that sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even reverse the splitting of the two lowest optically active excitonic states. Such a surprising cancellation of brigh...

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Autor principal: Zieliński, Michał
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7419534/
https://www.ncbi.nlm.nih.gov/pubmed/32782273
http://dx.doi.org/10.1038/s41598-020-70156-1
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author Zieliński, Michał
author_facet Zieliński, Michał
author_sort Zieliński, Michał
collection PubMed
description Contrary to simplified theoretical models, atomistic calculations presented here reveal that sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even reverse the splitting of the two lowest optically active excitonic states. Such a surprising cancellation of bright-exciton splitting occurs for shape-anisotropic nanostructures with realistic elongation ratios, yet without a wetting layer, which plays here a vital role. However, this non-trivial effect due to shape-elongation is strongly diminished by alloy randomness resulting from intermixing of InAs quantum-dot material with the surrounding InP matrix. Alloying randomizes, and to some degree flattens the shape dependence of fine-structure splitting giving a practical justification for the application of simplified theories. Finally, we find that the dark-exciton spectra are rather weakly affected by alloying and are dominated by the effects of lateral elongation.
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spelling pubmed-74195342020-08-13 Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer Zieliński, Michał Sci Rep Article Contrary to simplified theoretical models, atomistic calculations presented here reveal that sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even reverse the splitting of the two lowest optically active excitonic states. Such a surprising cancellation of bright-exciton splitting occurs for shape-anisotropic nanostructures with realistic elongation ratios, yet without a wetting layer, which plays here a vital role. However, this non-trivial effect due to shape-elongation is strongly diminished by alloy randomness resulting from intermixing of InAs quantum-dot material with the surrounding InP matrix. Alloying randomizes, and to some degree flattens the shape dependence of fine-structure splitting giving a practical justification for the application of simplified theories. Finally, we find that the dark-exciton spectra are rather weakly affected by alloying and are dominated by the effects of lateral elongation. Nature Publishing Group UK 2020-08-11 /pmc/articles/PMC7419534/ /pubmed/32782273 http://dx.doi.org/10.1038/s41598-020-70156-1 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Zieliński, Michał
Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title_full Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title_fullStr Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title_full_unstemmed Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title_short Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer
title_sort vanishing fine structure splitting in highly asymmetric inas/inp quantum dots without wetting layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7419534/
https://www.ncbi.nlm.nih.gov/pubmed/32782273
http://dx.doi.org/10.1038/s41598-020-70156-1
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