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Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics

[Image: see text] Here, we report the presence of ferromagnetism in hybrid nickel–boron nitride nanotubes (BNNTs) with an ordered structure, synthesized by chemical vapor deposition using elemental boron, nickel oxide as the catalyst, and ammonia gas as the source for nitrogen. In previous studies,...

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Autores principales: Lenin, Adithya, Arumugam, Pandurangan, Shanmugham, Revathi, Sonachalam, Arumugam, Paramasivam, Sivaprakash, Rao, Aruna Prakasa, Singaravelu, Ganesan, Venkatesan, Ramani
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7439259/
https://www.ncbi.nlm.nih.gov/pubmed/32832755
http://dx.doi.org/10.1021/acsomega.0c01408
_version_ 1783572943502049280
author Lenin, Adithya
Arumugam, Pandurangan
Shanmugham, Revathi
Sonachalam, Arumugam
Paramasivam, Sivaprakash
Rao, Aruna Prakasa
Singaravelu, Ganesan
Venkatesan, Ramani
author_facet Lenin, Adithya
Arumugam, Pandurangan
Shanmugham, Revathi
Sonachalam, Arumugam
Paramasivam, Sivaprakash
Rao, Aruna Prakasa
Singaravelu, Ganesan
Venkatesan, Ramani
author_sort Lenin, Adithya
collection PubMed
description [Image: see text] Here, we report the presence of ferromagnetism in hybrid nickel–boron nitride nanotubes (BNNTs) with an ordered structure, synthesized by chemical vapor deposition using elemental boron, nickel oxide as the catalyst, and ammonia gas as the source for nitrogen. In previous studies, the nanotubes were synthesized with two metal oxide catalysts, whereas here, only a single catalyst was used. The nanotube’s structure was determined by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. Purity of the nanotubes synthesized at 1150 °C was exceptional and this was determined by Raman spectroscopy. The average diameter of the nanotubes was 63 nm. Based on the magnetic studies carried out, it can be confirmed that the synthesized hybrid material is ferromagnetic at room temperature. Cyclic voltammetry was carried out to confirm the dielectric nature of the nanotubes. These materials could pave ways to nanoscale devices. The well-known thermal stability of BNNTs would play a vital role in preventing thermal failures in such small-scale devices where overheating is a major concern. The presence of semiconducting and magnetic properties in a single material could be confirmed, which might be highly significant in the field of spintronics.
format Online
Article
Text
id pubmed-7439259
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-74392592020-08-21 Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics Lenin, Adithya Arumugam, Pandurangan Shanmugham, Revathi Sonachalam, Arumugam Paramasivam, Sivaprakash Rao, Aruna Prakasa Singaravelu, Ganesan Venkatesan, Ramani ACS Omega [Image: see text] Here, we report the presence of ferromagnetism in hybrid nickel–boron nitride nanotubes (BNNTs) with an ordered structure, synthesized by chemical vapor deposition using elemental boron, nickel oxide as the catalyst, and ammonia gas as the source for nitrogen. In previous studies, the nanotubes were synthesized with two metal oxide catalysts, whereas here, only a single catalyst was used. The nanotube’s structure was determined by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. Purity of the nanotubes synthesized at 1150 °C was exceptional and this was determined by Raman spectroscopy. The average diameter of the nanotubes was 63 nm. Based on the magnetic studies carried out, it can be confirmed that the synthesized hybrid material is ferromagnetic at room temperature. Cyclic voltammetry was carried out to confirm the dielectric nature of the nanotubes. These materials could pave ways to nanoscale devices. The well-known thermal stability of BNNTs would play a vital role in preventing thermal failures in such small-scale devices where overheating is a major concern. The presence of semiconducting and magnetic properties in a single material could be confirmed, which might be highly significant in the field of spintronics. American Chemical Society 2020-08-04 /pmc/articles/PMC7439259/ /pubmed/32832755 http://dx.doi.org/10.1021/acsomega.0c01408 Text en Copyright © 2020 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Lenin, Adithya
Arumugam, Pandurangan
Shanmugham, Revathi
Sonachalam, Arumugam
Paramasivam, Sivaprakash
Rao, Aruna Prakasa
Singaravelu, Ganesan
Venkatesan, Ramani
Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title_full Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title_fullStr Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title_full_unstemmed Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title_short Hybrid Ni–Boron Nitride Nanotube Magnetic Semiconductor—A New Material for Spintronics
title_sort hybrid ni–boron nitride nanotube magnetic semiconductor—a new material for spintronics
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7439259/
https://www.ncbi.nlm.nih.gov/pubmed/32832755
http://dx.doi.org/10.1021/acsomega.0c01408
work_keys_str_mv AT leninadithya hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT arumugampandurangan hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT shanmughamrevathi hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT sonachalamarumugam hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT paramasivamsivaprakash hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT raoarunaprakasa hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT singaraveluganesan hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics
AT venkatesanramani hybridniboronnitridenanotubemagneticsemiconductoranewmaterialforspintronics