Cargando…
Band insulator to Mott insulator transition in 1T-TaS(2)
1T-TaS(2) undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we det...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7445232/ https://www.ncbi.nlm.nih.gov/pubmed/32839433 http://dx.doi.org/10.1038/s41467-020-18040-4 |
_version_ | 1783573946438778880 |
---|---|
author | Wang, Y. D. Yao, W. L. Xin, Z. M. Han, T. T. Wang, Z. G. Chen, L. Cai, C. Li, Yuan Zhang, Y. |
author_facet | Wang, Y. D. Yao, W. L. Xin, Z. M. Han, T. T. Wang, Z. G. Chen, L. Cai, C. Li, Yuan Zhang, Y. |
author_sort | Wang, Y. D. |
collection | PubMed |
description | 1T-TaS(2) undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we determine the electronic and structural properties of 1T-TaS(2) using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2π/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS(2) is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS(2) only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material’s electronic properties. |
format | Online Article Text |
id | pubmed-7445232 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-74452322020-09-02 Band insulator to Mott insulator transition in 1T-TaS(2) Wang, Y. D. Yao, W. L. Xin, Z. M. Han, T. T. Wang, Z. G. Chen, L. Cai, C. Li, Yuan Zhang, Y. Nat Commun Article 1T-TaS(2) undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we determine the electronic and structural properties of 1T-TaS(2) using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2π/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS(2) is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS(2) only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material’s electronic properties. Nature Publishing Group UK 2020-08-24 /pmc/articles/PMC7445232/ /pubmed/32839433 http://dx.doi.org/10.1038/s41467-020-18040-4 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Wang, Y. D. Yao, W. L. Xin, Z. M. Han, T. T. Wang, Z. G. Chen, L. Cai, C. Li, Yuan Zhang, Y. Band insulator to Mott insulator transition in 1T-TaS(2) |
title | Band insulator to Mott insulator transition in 1T-TaS(2) |
title_full | Band insulator to Mott insulator transition in 1T-TaS(2) |
title_fullStr | Band insulator to Mott insulator transition in 1T-TaS(2) |
title_full_unstemmed | Band insulator to Mott insulator transition in 1T-TaS(2) |
title_short | Band insulator to Mott insulator transition in 1T-TaS(2) |
title_sort | band insulator to mott insulator transition in 1t-tas(2) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7445232/ https://www.ncbi.nlm.nih.gov/pubmed/32839433 http://dx.doi.org/10.1038/s41467-020-18040-4 |
work_keys_str_mv | AT wangyd bandinsulatortomottinsulatortransitionin1ttas2 AT yaowl bandinsulatortomottinsulatortransitionin1ttas2 AT xinzm bandinsulatortomottinsulatortransitionin1ttas2 AT hantt bandinsulatortomottinsulatortransitionin1ttas2 AT wangzg bandinsulatortomottinsulatortransitionin1ttas2 AT chenl bandinsulatortomottinsulatortransitionin1ttas2 AT caic bandinsulatortomottinsulatortransitionin1ttas2 AT liyuan bandinsulatortomottinsulatortransitionin1ttas2 AT zhangy bandinsulatortomottinsulatortransitionin1ttas2 |