High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission

[Image: see text] Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low e...

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Detalles Bibliográficos
Autores principales: Haggar, Jack IH., Cai, Yuefei, Ghataora, Suneal S., Smith, Richard M., Bai, Jie, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7461145/
https://www.ncbi.nlm.nih.gov/pubmed/32904914
http://dx.doi.org/10.1021/acsaelm.0c00399
Descripción
Sumario:[Image: see text] Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low efficiency are used to obtain a high modulation bandwidth. This paper demonstrates a record modulation bandwidth of 540 MHz for our semipolar green LEDs with a broad area. Semipolar yellow and amber LEDs with modulation bandwidths of 350 and 140 MHz, respectively, have also been reported, and are the longest wavelength III-nitride LEDs. These results agree with differential carrier lifetime measurements.

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