Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, a...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Gaoming, Zhao, Xiaolong, Jia, Xiangwei, Li, Shuangqing, He, Yongning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7463516/
https://www.ncbi.nlm.nih.gov/pubmed/32751520
http://dx.doi.org/10.3390/mi11080740

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7463516/
https://www.ncbi.nlm.nih.gov/pubmed/32751520
http://dx.doi.org/10.3390/mi11080740

Ejemplares similares