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Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, a...

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Detalles Bibliográficos
Autores principales:	Li, Gaoming, Zhao, Xiaolong, Jia, Xiangwei, Li, Shuangqing, He, Yongning
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7463516/ https://www.ncbi.nlm.nih.gov/pubmed/32751520 http://dx.doi.org/10.3390/mi11080740

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