A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resona...

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Detalles Bibliográficos
Autores principales: Wang, Tianyun, Chen, Zeji, Jia, Qianqian, Yuan, Quan, Yang, Jinling, Yang, Fuhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7465385/
https://www.ncbi.nlm.nih.gov/pubmed/32751297
http://dx.doi.org/10.3390/mi11080737

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7465385/
https://www.ncbi.nlm.nih.gov/pubmed/32751297
http://dx.doi.org/10.3390/mi11080737

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