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Reliability of Miniaturized Transistors from the Perspective of Single-Defects
To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7465540/ https://www.ncbi.nlm.nih.gov/pubmed/32751280 http://dx.doi.org/10.3390/mi11080736 |
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author | Waltl, Michael |
author_facet | Waltl, Michael |
author_sort | Waltl, Michael |
collection | PubMed |
description | To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time. With ongoing miniaturization of the transistors towards a few tens of nanometer small devices the drift of the threshold voltage is observed to proceed in discrete steps. Quite interestingly, each of these steps correspond to charge capture or charge emission event of a certain defect in the atomic structure of the device. This observation paves the way for studying device reliability issues like BTI at the single-defect level. By considering single-defects the physical mechanism of charge trapping can be investigated very detailed. An in-depth understanding of the intricate charge trapping kinetics of the defects is essential for modeling of the device behavior and also for accurate estimation of the device lifetime amongst others. In this article the recent advancements in characterization, analysis and modeling of single-defects are reviewed. |
format | Online Article Text |
id | pubmed-7465540 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74655402020-09-04 Reliability of Miniaturized Transistors from the Perspective of Single-Defects Waltl, Michael Micromachines (Basel) Review To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time. With ongoing miniaturization of the transistors towards a few tens of nanometer small devices the drift of the threshold voltage is observed to proceed in discrete steps. Quite interestingly, each of these steps correspond to charge capture or charge emission event of a certain defect in the atomic structure of the device. This observation paves the way for studying device reliability issues like BTI at the single-defect level. By considering single-defects the physical mechanism of charge trapping can be investigated very detailed. An in-depth understanding of the intricate charge trapping kinetics of the defects is essential for modeling of the device behavior and also for accurate estimation of the device lifetime amongst others. In this article the recent advancements in characterization, analysis and modeling of single-defects are reviewed. MDPI 2020-07-29 /pmc/articles/PMC7465540/ /pubmed/32751280 http://dx.doi.org/10.3390/mi11080736 Text en © 2020 by the author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Waltl, Michael Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title_full | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title_fullStr | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title_full_unstemmed | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title_short | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
title_sort | reliability of miniaturized transistors from the perspective of single-defects |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7465540/ https://www.ncbi.nlm.nih.gov/pubmed/32751280 http://dx.doi.org/10.3390/mi11080736 |
work_keys_str_mv | AT waltlmichael reliabilityofminiaturizedtransistorsfromtheperspectiveofsingledefects |