Cargando…

Optimization of Ruthenium Dioxide Solid Contact in Ion-Selective Electrodes

Ruthenium dioxide occurs in two morphologically varied structures: anhydrous and hydrous form; both of them were studied in the scope of this work and applied as mediation layers in ion-selective electrodes. The differences between the electrochemical properties of those two materials underlie their...

Descripción completa

Detalles Bibliográficos
Autores principales: Lenar, Nikola, Paczosa-Bator, Beata, Piech, Robert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466053/
https://www.ncbi.nlm.nih.gov/pubmed/32784840
http://dx.doi.org/10.3390/membranes10080182
Descripción
Sumario:Ruthenium dioxide occurs in two morphologically varied structures: anhydrous and hydrous form; both of them were studied in the scope of this work and applied as mediation layers in ion-selective electrodes. The differences between the electrochemical properties of those two materials underlie their diverse structure and hydration properties, which was demonstrated in the paper. One of the main differences is the occurrence of structural water in RuO(2)•xH(2)O, which creates a large inner surface available for ion transport and was shown to be a favorable feature in the context of designing potentiometric sensors. Both materials were examined with SEM microscope, X-ray diffractometer, and contact angle microscope, and the results revealed that the hydrous form can be characterized as a porous structure with a smaller crystallite size and more hydrophobic properties contrary to the anhydrous form. Potentiometric and electrochemical tests carried out on designed GCD/RuO(2)/K(+)-ISM and GCD/RuO(2)•xH(2)O/K(+)-ISM electrodes proved that the loose porous microstructure with chemically bounded water, which is characteristic for the hydrous form, ensures the high electrical capacitance of electrodes (up to 1.2 mF) with consequently more stable potential (with the potential drift of 0.0015 mV/h) and a faster response (of a few seconds).