Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generatio...

Descripción completa

Detalles Bibliográficos
Autores principales: Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z., Yang, Li, Zhao, Cezhou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466260/
https://www.ncbi.nlm.nih.gov/pubmed/32717952
http://dx.doi.org/10.3390/nano10081437

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466260/
https://www.ncbi.nlm.nih.gov/pubmed/32717952
http://dx.doi.org/10.3390/nano10081437

Ejemplares similares