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Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition
Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes hav...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466503/ https://www.ncbi.nlm.nih.gov/pubmed/32727137 http://dx.doi.org/10.3390/nano10081471 |
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author | Yang, Kun Liu, Hongxia Wang, Shulong Yu, Wenlong Han, Tao |
author_facet | Yang, Kun Liu, Hongxia Wang, Shulong Yu, Wenlong Han, Tao |
author_sort | Yang, Kun |
collection | PubMed |
description | Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO(3), the MoS(2) memory exhibits a very comprehensive information storage capability, including robust endurance and ultra-fast write speed of 1 ms approximately. It is worth mentioning that it exhibits a long-term stable charge storage capacity (refresh time is about 1000 s), which is 10(5) times that of the dynamic random access memory (refresh time is on a milliseconds timescale) so that the unnecessary power dissipation greatly reduces caused by frequent refresh. In addition, its simple manufacturing process makes it compatible with various current two-dimensional electronic devices, which will greatly promote the integration of two-dimensional electronic computing. |
format | Online Article Text |
id | pubmed-7466503 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74665032020-09-14 Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition Yang, Kun Liu, Hongxia Wang, Shulong Yu, Wenlong Han, Tao Nanomaterials (Basel) Article Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO(3), the MoS(2) memory exhibits a very comprehensive information storage capability, including robust endurance and ultra-fast write speed of 1 ms approximately. It is worth mentioning that it exhibits a long-term stable charge storage capacity (refresh time is about 1000 s), which is 10(5) times that of the dynamic random access memory (refresh time is on a milliseconds timescale) so that the unnecessary power dissipation greatly reduces caused by frequent refresh. In addition, its simple manufacturing process makes it compatible with various current two-dimensional electronic devices, which will greatly promote the integration of two-dimensional electronic computing. MDPI 2020-07-27 /pmc/articles/PMC7466503/ /pubmed/32727137 http://dx.doi.org/10.3390/nano10081471 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yang, Kun Liu, Hongxia Wang, Shulong Yu, Wenlong Han, Tao Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title | Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title_full | Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title_fullStr | Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title_full_unstemmed | Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title_short | Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition |
title_sort | comprehensive performance quasi-non-volatile memory compatible with large-scale preparation by chemical vapor deposition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466503/ https://www.ncbi.nlm.nih.gov/pubmed/32727137 http://dx.doi.org/10.3390/nano10081471 |
work_keys_str_mv | AT yangkun comprehensiveperformancequasinonvolatilememorycompatiblewithlargescalepreparationbychemicalvapordeposition AT liuhongxia comprehensiveperformancequasinonvolatilememorycompatiblewithlargescalepreparationbychemicalvapordeposition AT wangshulong comprehensiveperformancequasinonvolatilememorycompatiblewithlargescalepreparationbychemicalvapordeposition AT yuwenlong comprehensiveperformancequasinonvolatilememorycompatiblewithlargescalepreparationbychemicalvapordeposition AT hantao comprehensiveperformancequasinonvolatilememorycompatiblewithlargescalepreparationbychemicalvapordeposition |