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Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite
The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO(3) perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberra...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466604/ https://www.ncbi.nlm.nih.gov/pubmed/32748811 http://dx.doi.org/10.3390/nano10081515 |
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author | Hong, Minghwei Cheng, Chao-Kai Lin, Yen-Hsun Young, Lawrence Boyu Cai, Ren-Fong Hsu, Chia-Hung Wu, Chien-Ting Kwo, Jueinai |
author_facet | Hong, Minghwei Cheng, Chao-Kai Lin, Yen-Hsun Young, Lawrence Boyu Cai, Ren-Fong Hsu, Chia-Hung Wu, Chien-Ting Kwo, Jueinai |
author_sort | Hong, Minghwei |
collection | PubMed |
description | The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO(3) perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al(2)O(3)/Y(2)O(3) multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y(2)O(3). This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al(2)O(3) cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A. |
format | Online Article Text |
id | pubmed-7466604 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74666042020-09-14 Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite Hong, Minghwei Cheng, Chao-Kai Lin, Yen-Hsun Young, Lawrence Boyu Cai, Ren-Fong Hsu, Chia-Hung Wu, Chien-Ting Kwo, Jueinai Nanomaterials (Basel) Article The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO(3) perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al(2)O(3)/Y(2)O(3) multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y(2)O(3). This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al(2)O(3) cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A. MDPI 2020-08-02 /pmc/articles/PMC7466604/ /pubmed/32748811 http://dx.doi.org/10.3390/nano10081515 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hong, Minghwei Cheng, Chao-Kai Lin, Yen-Hsun Young, Lawrence Boyu Cai, Ren-Fong Hsu, Chia-Hung Wu, Chien-Ting Kwo, Jueinai Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title | Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title_full | Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title_fullStr | Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title_full_unstemmed | Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title_short | Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO(3) Perovskite |
title_sort | epitaxy from a periodic y–o monolayer: growth of single-crystal hexagonal yalo(3) perovskite |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466604/ https://www.ncbi.nlm.nih.gov/pubmed/32748811 http://dx.doi.org/10.3390/nano10081515 |
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