Reducing Amplified Spontaneous Emission Threshold in CsPbBr(3) Quantum Dot Films by Controlling TiO(2) Compact Layer

Amplified spontaneous emission (ASE) threshold in [Formula: see text] quantum dot films is systematically reduced by introducing high quality [Formula: see text] compact layer grown by atomic-layer deposition. Uniform and pinhole-free [Formula: see text] films of thickness 10, 20 and 50 nm are used...

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Detalles Bibliográficos
Autores principales: Qaid, Saif M. H., Alharbi, Fahhad H., Bedja, Idriss, Nazeeruddin, Mohammad Khaja, Aldwayyan, Abdullah S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466662/
https://www.ncbi.nlm.nih.gov/pubmed/32824157
http://dx.doi.org/10.3390/nano10081605

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466662/
https://www.ncbi.nlm.nih.gov/pubmed/32824157
http://dx.doi.org/10.3390/nano10081605

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