Cargando…
State of the Art and Future Perspectives in Advanced CMOS Technology
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced...
Autores principales: | Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, Xu, Buqing, Li, Ben, Zhao, Xuewei, Yu, Jiahan, Dong, Yan, Wang, Guilei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466708/ https://www.ncbi.nlm.nih.gov/pubmed/32784801 http://dx.doi.org/10.3390/nano10081555 |
Ejemplares similares
-
Miniaturization of CMOS
por: Radamson, Henry H., et al.
Publicado: (2019) -
Strain Modulation of Selectively and/or Globally Grown Ge Layers
por: Du, Yong, et al.
Publicado: (2021) -
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate
por: Xu, Buqing, et al.
Publicado: (2022) -
Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application
por: Li, Chen, et al.
Publicado: (2020) -
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
por: Miao, Yuanhao, et al.
Publicado: (2021)