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Mechanical Stabilization of Nanoscale Conductors by Plasmon Oscillations

[Image: see text] External driving of the Fermion reservoirs interacting with a nanoscale charge-conductor is shown to enhance its mechanical stability during resonant tunneling. This counterintuitive cooling effect is predicted despite the net energy flow into the device. Field-induced plasmon osci...

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Detalles Bibliográficos
Autores principales: Kuperman, Maayan, Nagar, Linoy, Peskin, Uri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7467764/
https://www.ncbi.nlm.nih.gov/pubmed/32538634
http://dx.doi.org/10.1021/acs.nanolett.0c02187
Descripción
Sumario:[Image: see text] External driving of the Fermion reservoirs interacting with a nanoscale charge-conductor is shown to enhance its mechanical stability during resonant tunneling. This counterintuitive cooling effect is predicted despite the net energy flow into the device. Field-induced plasmon oscillations stir the energy distribution of charge carriers near the reservoir’s chemical potentials into a nonequilibrium state with favored transport of low-energy electrons. Consequently, excess heating of mechanical degrees of freedom in the conductor is suppressed. We demonstrate and analyze this effect for a generic model of mechanical instability in nanoelectronic devices, covering a broad range of parameters. Plasmon-induced stabilization is suggested as a feasible strategy to confront a major problem of current-induced heating and breakdown of nanoscale systems operating far from equilibrium.