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Broken symmetries and the related interface-induced effects at Weyl-system TaAs in proximity of noble metals
Weyl semimetal TaAs, congenially accommodating the massless Weyl fermions, furnishes a platform to observe a spontaneous breaking of either the time-reversal or the inversion symmetry and the concurrent genesis of pairs of Weyl nodes with significant topological durability. Former experimental analy...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7468271/ https://www.ncbi.nlm.nih.gov/pubmed/32879416 http://dx.doi.org/10.1038/s41598-020-71494-w |
Sumario: | Weyl semimetal TaAs, congenially accommodating the massless Weyl fermions, furnishes a platform to observe a spontaneous breaking of either the time-reversal or the inversion symmetry and the concurrent genesis of pairs of Weyl nodes with significant topological durability. Former experimental analysis, which reveals that the near-zero spin-polarization of bulk TaAs, experiences a boost in proximity of point-contacts of non-magnetic metals along with the associated tip-induced superconductivity, provides the impetus to study the large-area stacked interfaces of TaAs with noble metals like Au and Ag. The primary outcomes of the present work can be listed as follows: (1) First-principles calculations on the interfacial systems have manifested an increment of the interface-induced spin-polarization and contact-induced transport spin-polarization of TaAs in proximity of noble metals; (2) In contrast to the single interface, for vertically stacked cases, the broken inversion symmetry of the system introduces a z-directional band-dispersion, resulting in an energetically separated series of non-degenerate band crossings. The simultaneous presence of such band-crossings and spin-polarization indicated the coexistence of both broken time reversal and inversion symmetries for metal-semimetal stacked interfaces; (3) quantum transport calculations on different device geometries reveal the importance of contact geometry for spin-transport in TaAs devices. Lateral contacts are found to be more effective in obtaining a uniform spin transport and larger transport spin polarization; (4) the phonon dispersion behaviour of TaAs displays a closure of band-gap with the associated increase of phonon-density of states for the acoustic modes in proximity of lateral contacts of noble metals. |
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