Room-Temperature Quantum Emitter in Aluminum Nitride

[Image: see text] A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bul...

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Autores principales: Bishop, Sam G., Hadden, John P., Alzahrani, Faris D., Hekmati, Reza, Huffaker, Diana L., Langbein, Wolfgang W., Bennett, Anthony J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7469133/
https://www.ncbi.nlm.nih.gov/pubmed/32905301
http://dx.doi.org/10.1021/acsphotonics.0c00528
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author Bishop, Sam G.
Hadden, John P.
Alzahrani, Faris D.
Hekmati, Reza
Huffaker, Diana L.
Langbein, Wolfgang W.
Bennett, Anthony J.
author_facet Bishop, Sam G.
Hadden, John P.
Alzahrani, Faris D.
Hekmati, Reza
Huffaker, Diana L.
Langbein, Wolfgang W.
Bennett, Anthony J.
author_sort Bishop, Sam G.
collection PubMed
description [Image: see text] A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>10(5) counts s(–1)), pure (g((2))(0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
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spelling pubmed-74691332020-09-04 Room-Temperature Quantum Emitter in Aluminum Nitride Bishop, Sam G. Hadden, John P. Alzahrani, Faris D. Hekmati, Reza Huffaker, Diana L. Langbein, Wolfgang W. Bennett, Anthony J. ACS Photonics [Image: see text] A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>10(5) counts s(–1)), pure (g((2))(0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor. American Chemical Society 2020-06-11 2020-07-15 /pmc/articles/PMC7469133/ /pubmed/32905301 http://dx.doi.org/10.1021/acsphotonics.0c00528 Text en Copyright © 2020 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Bishop, Sam G.
Hadden, John P.
Alzahrani, Faris D.
Hekmati, Reza
Huffaker, Diana L.
Langbein, Wolfgang W.
Bennett, Anthony J.
Room-Temperature Quantum Emitter in Aluminum Nitride
title Room-Temperature Quantum Emitter in Aluminum Nitride
title_full Room-Temperature Quantum Emitter in Aluminum Nitride
title_fullStr Room-Temperature Quantum Emitter in Aluminum Nitride
title_full_unstemmed Room-Temperature Quantum Emitter in Aluminum Nitride
title_short Room-Temperature Quantum Emitter in Aluminum Nitride
title_sort room-temperature quantum emitter in aluminum nitride
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7469133/
https://www.ncbi.nlm.nih.gov/pubmed/32905301
http://dx.doi.org/10.1021/acsphotonics.0c00528
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